MJE800G is Obsolete and no longer manufactured.
Available Substitutes:

Direct


onsemi
In Stock: 4.727
Unit Price: 1,42000 €
Datasheet

Direct


onsemi
In Stock: 288
Unit Price: 1,35000 €
Datasheet

Direct


STMicroelectronics
In Stock: 3.696
Unit Price: 1,82000 €
Datasheet

Similar


STMicroelectronics
In Stock: 4.226
Unit Price: 0,82000 €
Datasheet
Bipolar (BJT) Transistor NPN - Darlington 60 V 4 A 40 W Through Hole TO-126
Image shown is a representation only. Exact specifications should be obtained from the product data sheet.

MJE800G

DigiKey Part Number
MJE800GOS-ND
Manufacturer
Manufacturer Product Number
MJE800G
Description
TRANS NPN DARL 60V 4A TO-126
Customer Reference
Detailed Description
Bipolar (BJT) Transistor NPN - Darlington 60 V 4 A 40 W Through Hole TO-126
Datasheet
 Datasheet
Product Attributes
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Category
Current - Collector Cutoff (Max)
100µA
Mfr
DC Current Gain (hFE) (Min) @ Ic, Vce
750 @ 1.5A, 3V
Packaging
Bulk
Power - Max
40 W
Part Status
Obsolete
Operating Temperature
-55°C ~ 150°C (TJ)
Transistor Type
Mounting Type
Through Hole
Current - Collector (Ic) (Max)
4 A
Package / Case
TO-225AA, TO-126-3
Voltage - Collector Emitter Breakdown (Max)
60 V
Supplier Device Package
TO-126
Vce Saturation (Max) @ Ib, Ic
2.5V @ 30mA, 1.5A
Base Product Number
Environmental & Export Classifications
Product Questions and Answers
Additional Resources
Substitutes (4)
Part NumberManufacturerQuantity AvailableDigiKey Part NumberUnit PriceSubstitute Type
BD681Gonsemi4.727BD681GOS-ND1,42000 €Direct
KSE800STUonsemi288KSE800STU-ND1,35000 €Direct
BD677STMicroelectronics3.696497-5714-ND1,82000 €Direct
BD677ASTMicroelectronics4.226497-BD677A-ND0,82000 €Similar
Obsolete
This product is no longer manufactured. View Substitutes