MJE180PWD is Obsolete and no longer manufactured.
Available Substitutes:

Direct


onsemi
In Stock: 29
Unit Price: 1,02000 €
Datasheet

Parametric Equivalent


onsemi
In Stock: 1.049
Unit Price: 1,33000 €
Datasheet

Parametric Equivalent


Central Semiconductor Corp
In Stock: 139
Unit Price: 2,47000 €
Datasheet
Bipolar (BJT) Transistor NPN 40 V 3 A 50MHz 1.5 W Through Hole TO-126
Image shown is a representation only. Exact specifications should be obtained from the product data sheet.

MJE180PWD

DigiKey Part Number
MJE180PWD-ND
Manufacturer
Manufacturer Product Number
MJE180PWD
Description
TRANS NPN 40V 3A TO-126
Customer Reference
Detailed Description
Bipolar (BJT) Transistor NPN 40 V 3 A 50MHz 1.5 W Through Hole TO-126
Datasheet
 Datasheet
EDA/CAD Models
MJE180PWD Models
Product Attributes
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Category
DC Current Gain (hFE) (Min) @ Ic, Vce
50 @ 100mA, 1V
Mfr
Power - Max
1.5 W
Packaging
Bulk
Frequency - Transition
50MHz
Part Status
Obsolete
Operating Temperature
150°C (TJ)
Transistor Type
Mounting Type
Through Hole
Current - Collector (Ic) (Max)
3 A
Package / Case
TO-225AA, TO-126-3
Voltage - Collector Emitter Breakdown (Max)
40 V
Supplier Device Package
TO-126
Vce Saturation (Max) @ Ib, Ic
1.7V @ 600mA, 3A
Base Product Number
Current - Collector Cutoff (Max)
100nA (ICBO)
Environmental & Export Classifications
Product Questions and Answers
Additional Resources
Substitutes (3)
Part NumberManufacturerQuantity AvailableDigiKey Part NumberUnit PriceSubstitute Type
MJE180STUonsemi29MJE180STU-ND1,02000 €Direct
MJE180Gonsemi1.049MJE180GOS-ND1,33000 €Parametric Equivalent
MJE180 PBFREECentral Semiconductor Corp1391514-MJE180PBFREE-ND2,47000 €Parametric Equivalent
Obsolete
This product is no longer manufactured. View Substitutes
Non-Cancelable/Non-Returnable