Bipolar (BJT) Transistor NPN 25 V 300 mA 400 mW Through Hole TO-92-3
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KSD227GBU

DigiKey Part Number
KSD227GBU-ND
Manufacturer
Manufacturer Product Number
KSD227GBU
Description
TRANS NPN 25V 0.3A TO-92-3
Customer Reference
Detailed Description
Bipolar (BJT) Transistor NPN 25 V 300 mA 400 mW Through Hole TO-92-3
Datasheet
 Datasheet
EDA/CAD Models
KSD227GBU Models
Product Attributes
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Category
Current - Collector Cutoff (Max)
100nA (ICBO)
Mfr
DC Current Gain (hFE) (Min) @ Ic, Vce
200 @ 50mA, 1V
Packaging
Bulk
Power - Max
400 mW
Part Status
Obsolete
Operating Temperature
150°C (TJ)
Transistor Type
Mounting Type
Through Hole
Current - Collector (Ic) (Max)
300 mA
Package / Case
TO-226-3, TO-92-3 (TO-226AA)
Voltage - Collector Emitter Breakdown (Max)
25 V
Supplier Device Package
TO-92-3
Vce Saturation (Max) @ Ib, Ic
400mV @ 30mA, 300mA
Base Product Number
Environmental & Export Classifications
Product Questions and Answers
Additional Resources
Obsolete
This product is no longer manufactured.
Non-Cancelable/Non-Returnable