N-Channel 200 V 18A (Tc) 110W (Tc) Through Hole TO-220-3
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IRL640APWD

DigiKey Part Number
488-IRL640APWD-ND
Manufacturer
onsemi
Manufacturer Product Number
IRL640APWD
Description
POWER MOSFET, N-CHANNEL, LOGIC L
Customer Reference
Detailed Description
N-Channel 200 V 18A (Tc) 110W (Tc) Through Hole TO-220-3
Datasheet
 Datasheet
Product Attributes
Type
Description
Select All
Category
Mfr
onsemi
Series
PowerTrench®
Packaging
Bulk
Part Status
Discontinued at DigiKey
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
200 V
Current - Continuous Drain (Id) @ 25°C
18A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
5V
Rds On (Max) @ Id, Vgs
180mOhm @ 9A, 5V
Vgs(th) (Max) @ Id
2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
56 nC @ 5 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
1705 pF @ 25 V
FET Feature
-
Power Dissipation (Max)
110W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
Grade
-
Qualification
-
Mounting Type
Through Hole
Supplier Device Package
TO-220-3
Package / Case
TO-220-3
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