FGA50N100BNTD2 is Obsolete and no longer manufactured.
Available Substitutes:

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Toshiba Semiconductor and Storage
In Stock: 99
Unit Price: 4,77000 €
Datasheet
IGBT NPT and Trench 1000 V 50 A 156 W Through Hole TO-3P
Image shown is a representation only. Exact specifications should be obtained from the product data sheet.

FGA50N100BNTD2

DigiKey Part Number
FGA50N100BNTD2-ND
Manufacturer
Manufacturer Product Number
FGA50N100BNTD2
Description
IGBT NPT/TRENCH 1000V 50A TO-3P
Customer Reference
Detailed Description
IGBT NPT and Trench 1000 V 50 A 156 W Through Hole TO-3P
Datasheet
 Datasheet
Product Attributes
Type
Description
Select All
Category
Manufacturer
onsemi
Series
-
Packaging
Tube
Part Status
Obsolete
IGBT Type
NPT and Trench
Voltage - Collector Emitter Breakdown (Max)
1000 V
Current - Collector (Ic) (Max)
50 A
Current - Collector Pulsed (Icm)
200 A
Vce(on) (Max) @ Vge, Ic
2.9V @ 15V, 60A
Power - Max
156 W
Switching Energy
-
Input Type
Standard
Gate Charge
257 nC
Td (on/off) @ 25°C
34ns/243ns
Test Condition
600V, 60A, 10Ohm, 15V
Reverse Recovery Time (trr)
75 ns
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Through Hole
Package / Case
TO-3P-3, SC-65-3
Supplier Device Package
TO-3P
Base Product Number
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Obsolete
This product is no longer manufactured. View Substitutes