Bipolar (BJT) Transistor NPN 200 V 40 A 8MHz 250 W Through Hole TO-204 (TO-3)
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BUV21G

DigiKey Part Number
BUV21GOS-NDOS-ND
Manufacturer
onsemi
Manufacturer Product Number
BUV21G
Description
TRANS NPN 200V 40A TO204
Manufacturer Standard Lead Time
20 Weeks
Customer Reference
Detailed Description
Bipolar (BJT) Transistor NPN 200 V 40 A 8MHz 250 W Through Hole TO-204 (TO-3)
Datasheet
 Datasheet
EDA/CAD Models
BUV21G Models
Product Attributes
Type
Description
Select All
Category
Mfr
onsemi
Series
SWITCHMODE™
Packaging
Tray
Part Status
Active
Transistor Type
NPN
Current - Collector (Ic) (Max)
40 A
Voltage - Collector Emitter Breakdown (Max)
200 V
Vce Saturation (Max) @ Ib, Ic
1.5V @ 3A, 25A
Current - Collector Cutoff (Max)
3mA
DC Current Gain (hFE) (Min) @ Ic, Vce
20 @ 12A, 2V
Power - Max
250 W
Frequency - Transition
8MHz
Operating Temperature
-65°C ~ 200°C (TJ)
Mounting Type
Through Hole
Package / Case
TO-204AE
Supplier Device Package
TO-204 (TO-3)
Base Product Number
BUV21
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In-Stock: 99
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Tray:100
Quantity
All prices are in EUR
Tray
QuantityUnit PriceExt Price
118,68000 €18,68 €
1013,43600 €134,36 €
10010,78850 €1.078,85 €
Manufacturers Standard Package
Note: Due to DigiKey value-add services the packaging type may change when product is purchased at quantities beneath the standard package.
Unit Price without VAT:18,68000 €
Unit Price with VAT:22,22920 €