Bipolar (BJT) Transistor NPN 60 V 3 A 390MHz 800 mW Through Hole TP
Image shown is a representation only. Exact specifications should be obtained from the product data sheet.

2SC6097-E

DigiKey Part Number
2SC6097-EOS-ND
Manufacturer
Manufacturer Product Number
2SC6097-E
Description
TRANS NPN 60V 3A TP
Customer Reference
Detailed Description
Bipolar (BJT) Transistor NPN 60 V 3 A 390MHz 800 mW Through Hole TP
Datasheet
 Datasheet
EDA/CAD Models
2SC6097-E Models
Product Attributes
Filter Similar Products
Show Empty Attributes
Category
DC Current Gain (hFE) (Min) @ Ic, Vce
300 @ 100mA, 2V
Mfr
Power - Max
800 mW
Packaging
Bag
Frequency - Transition
390MHz
Part Status
Obsolete
Operating Temperature
150°C (TJ)
Transistor Type
Mounting Type
Through Hole
Current - Collector (Ic) (Max)
3 A
Package / Case
TO-251-3 Short Leads, IPAK, TO-251AA
Voltage - Collector Emitter Breakdown (Max)
60 V
Supplier Device Package
TP
Vce Saturation (Max) @ Ib, Ic
135mV @ 100mA, 1A
Base Product Number
Current - Collector Cutoff (Max)
1µA (ICBO)
Environmental & Export Classifications
Product Questions and Answers
Additional Resources
Obsolete
This product is no longer manufactured.