2N5657G is Obsolete and no longer manufactured.
Available Substitutes:

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onsemi
In Stock: 3.898
Unit Price: 0,41027 €
Datasheet
Bipolar (BJT) Transistor NPN 350 V 500 mA 10MHz 20 W Through Hole TO-126
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2N5657G

DigiKey Part Number
2N5657GOS-ND
Manufacturer
Manufacturer Product Number
2N5657G
Description
TRANS NPN 350V 0.5A TO-126
Customer Reference
Detailed Description
Bipolar (BJT) Transistor NPN 350 V 500 mA 10MHz 20 W Through Hole TO-126
Datasheet
 Datasheet
Product Attributes
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Category
DC Current Gain (hFE) (Min) @ Ic, Vce
30 @ 100mA, 10V
Mfr
Power - Max
20 W
Packaging
Bulk
Frequency - Transition
10MHz
Part Status
Obsolete
Operating Temperature
-65°C ~ 150°C (TJ)
Transistor Type
Mounting Type
Through Hole
Current - Collector (Ic) (Max)
500 mA
Package / Case
TO-225AA, TO-126-3
Voltage - Collector Emitter Breakdown (Max)
350 V
Supplier Device Package
TO-126
Vce Saturation (Max) @ Ib, Ic
10V @ 100mA, 500mA
Base Product Number
Current - Collector Cutoff (Max)
100µA
Environmental & Export Classifications
Product Questions and Answers
Additional Resources
Substitutes (1)
Part NumberManufacturerQuantity AvailableDigiKey Part NumberUnit PriceSubstitute Type
MJD340Gonsemi3.898MJD340GOS-ND0,41027 €Similar
Obsolete
This product is no longer manufactured. View Substitutes