2N5550G is Obsolete and no longer manufactured.
Available Substitutes:

Similar


onsemi
In Stock: 5.418
Unit Price: 0,13000 €
Datasheet

Similar


Diodes Incorporated
In Stock: 4.104
Unit Price: 1,08000 €
Datasheet
Bipolar (BJT) Transistor NPN 140 V 600 mA 300MHz 625 mW Through Hole TO-92 (TO-226)
Image shown is a representation only. Exact specifications should be obtained from the product data sheet.

2N5550G

DigiKey Part Number
2N5550GOS-ND
Manufacturer
Manufacturer Product Number
2N5550G
Description
TRANS NPN 140V 0.6A TO92
Customer Reference
Detailed Description
Bipolar (BJT) Transistor NPN 140 V 600 mA 300MHz 625 mW Through Hole TO-92 (TO-226)
Datasheet
 Datasheet
EDA/CAD Models
2N5550G Models
Product Attributes
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Category
DC Current Gain (hFE) (Min) @ Ic, Vce
60 @ 10mA, 5V
Mfr
Power - Max
625 mW
Packaging
Bulk
Frequency - Transition
300MHz
Part Status
Obsolete
Operating Temperature
-55°C ~ 150°C (TJ)
Transistor Type
Mounting Type
Through Hole
Current - Collector (Ic) (Max)
600 mA
Package / Case
TO-226-3, TO-92-3 Long Body
Voltage - Collector Emitter Breakdown (Max)
140 V
Supplier Device Package
TO-92 (TO-226)
Vce Saturation (Max) @ Ib, Ic
250mV @ 5mA, 50mA
Base Product Number
Current - Collector Cutoff (Max)
100nA (ICBO)
Environmental & Export Classifications
Product Questions and Answers
Additional Resources
Substitutes (2)
Part NumberManufacturerQuantity AvailableDigiKey Part NumberUnit PriceSubstitute Type
MMBT5550LT1Gonsemi5.418MMBT5550LT1GOSCT-ND0,13000 €Similar
ZTX455Diodes Incorporated4.104ZTX455-ND1,08000 €Similar
Obsolete
This product is no longer manufactured. View Substitutes or Alternative Package Types