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JAN2N6849 | |
|---|---|
DigiKey Part Number | 150-JAN2N6849-ND |
Manufacturer | Microsemi Corporation |
Manufacturer Product Number | JAN2N6849 |
Description | MOSFET P-CH 100V 6.5A TO39 |
Customer Reference | |
Detailed Description | P-Channel 100 V 6.5A (Tc) 800mW (Ta), 25W (Tc) Through Hole TO-39 |
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Category | Vgs(th) (Max) @ Id 4V @ 250µA |
Mfr | Gate Charge (Qg) (Max) @ Vgs 34.8 nC @ 10 V |
Packaging Bulk | Vgs (Max) ±20V |
Part Status Obsolete | Power Dissipation (Max) 800mW (Ta), 25W (Tc) |
FET Type | Operating Temperature -55°C ~ 150°C (TJ) |
Technology | Grade Military |
Drain to Source Voltage (Vdss) 100 V | Qualification MIL-PRF-19500/564 |
Current - Continuous Drain (Id) @ 25°C | Mounting Type Through Hole |
Drive Voltage (Max Rds On, Min Rds On) 10V | Supplier Device Package TO-39 |
Rds On (Max) @ Id, Vgs 320mOhm @ 6.5A, 10V | Package / Case |
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