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JAN2N6766 | |
|---|---|
DigiKey Part Number | 150-JAN2N6766-ND |
Manufacturer | Microsemi Corporation |
Manufacturer Product Number | JAN2N6766 |
Description | MOSFET N-CH 200V 30A TO3 |
Customer Reference | |
Detailed Description | N-Channel 200 V 30A (Tc) 4W (Ta), 150W (Tc) Through Hole TO-3 |
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Category | Vgs(th) (Max) @ Id 4V @ 250µA |
Mfr | Gate Charge (Qg) (Max) @ Vgs 115 nC @ 10 V |
Packaging Bulk | Vgs (Max) ±20V |
Part Status Obsolete | Power Dissipation (Max) 4W (Ta), 150W (Tc) |
FET Type | Operating Temperature -55°C ~ 150°C (TJ) |
Technology | Grade Military |
Drain to Source Voltage (Vdss) 200 V | Qualification MIL-PRF-19500/543 |
Current - Continuous Drain (Id) @ 25°C | Mounting Type Through Hole |
Drive Voltage (Max Rds On, Min Rds On) 10V | Supplier Device Package TO-3 |
Rds On (Max) @ Id, Vgs 90mOhm @ 30A, 10V | Package / Case |
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