Bipolar (BJT) Transistor NPN 1000 V 200 mA 1 W Through Hole TO-39 (TO-205AD)
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2N5015S

DigiKey Part Number
150-2N5015S-ND
Manufacturer
Microsemi Corporation
Manufacturer Product Number
2N5015S
Description
TRANS NPN 1000V 0.2A TO39
Customer Reference
Detailed Description
Bipolar (BJT) Transistor NPN 1000 V 200 mA 1 W Through Hole TO-39 (TO-205AD)
Product Attributes
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Category
DC Current Gain (hFE) (Min) @ Ic, Vce
30 @ 20mA, 10V
Mfr
Power - Max
1 W
Packaging
Bulk
Operating Temperature
-65°C ~ 200°C (TJ)
Part Status
Obsolete
Grade
Military
Transistor Type
Qualification
MIL-PRF-19500/727
Current - Collector (Ic) (Max)
200 mA
Mounting Type
Through Hole
Voltage - Collector Emitter Breakdown (Max)
1000 V
Package / Case
TO-205AD, TO-39-3 Metal Can
Vce Saturation (Max) @ Ib, Ic
1.8V @ 5mA, 20mA
Supplier Device Package
TO-39 (TO-205AD)
Current - Collector Cutoff (Max)
10nA (ICBO)
Environmental & Export Classifications
Product Questions and Answers
Additional Resources
Obsolete
This product is no longer manufactured.