TO-263AB
Image shown is a representation only. Exact specifications should be obtained from the product data sheet.

IXTA3N100P

DigiKey Part Number
IXTA3N100P-ND
Manufacturer
IXYS
Manufacturer Product Number
IXTA3N100P
Description
MOSFET N-CH 1000V 3A TO263
Manufacturer Standard Lead Time
50 Weeks
Customer Reference
Detailed Description
N-Channel 1000 V 3A (Tc) 125W (Tc) Surface Mount TO-263AA
Datasheet
 Datasheet
Product Attributes
Type
Description
Select All
Category
Mfr
IXYS
Series
Polar
Packaging
Tube
Part Status
Active
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
1000 V
Current - Continuous Drain (Id) @ 25°C
3A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
4.8Ohm @ 1.5A, 10V
Vgs(th) (Max) @ Id
4.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
39 nC @ 10 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
1100 pF @ 25 V
FET Feature
-
Power Dissipation (Max)
125W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
Grade
-
Qualification
-
Mounting Type
Surface Mount
Supplier Device Package
TO-263AA
Package / Case
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Base Product Number
IXTA3
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Available To Order
Factory Stock: 400
Check Lead Time
Quantity
All prices are in EUR
Tube
QuantityUnit PriceExt Price
3002,07280 €621,84 €
Note: Due to DigiKey value-add services the packaging type may change when product is purchased at quantities beneath the standard package.
Unit Price without VAT:2,07280 €
Unit Price with VAT:2,46663 €