N-Channel 650 V 111A (Tc) 600W (Tc) Through Hole TO-263-7
Image shown is a representation only. Exact specifications should be obtained from the product data sheet.

IV2Q06025D7Z

DigiKey Part Number
4084-IV2Q06025D7Z-ND
Manufacturer
Inventchip
Manufacturer Product Number
IV2Q06025D7Z
Description
GEN 2, SIC MOSFET, 650V 25MOHM,
Manufacturer Standard Lead Time
15 Weeks
Customer Reference
Detailed Description
N-Channel 650 V 111A (Tc) 600W (Tc) Through Hole TO-263-7
Datasheet
 Datasheet
Product Attributes
Type
Description
Select All
Category
Mfr
Inventchip
Series
-
Packaging
Tube
Part Status
Active
FET Type
N-Channel
Technology
SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss)
650 V
Current - Continuous Drain (Id) @ 25°C
111A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
18V
Rds On (Max) @ Id, Vgs
33mOhm @ 40A, 18V
Vgs(th) (Max) @ Id
4.5V @ 12mA
Gate Charge (Qg) (Max) @ Vgs
125 nC @ 18 V
Vgs (Max)
+20V, -5V
Input Capacitance (Ciss) (Max) @ Vds
3090 pF @ 600 V
FET Feature
-
Power Dissipation (Max)
600W (Tc)
Operating Temperature
-55°C ~ 175°C (TJ)
Mounting Type
Through Hole
Supplier Device Package
TO-263-7
Package / Case
TO-263-8, D2PAK (7 Leads + Tab)
Product Questions and Answers

See what engineers are asking, ask your own questions, or help out a member of the DigiKey engineering community

Available To Order
Check Lead Time
This product is not kept in stock at DigiKey. The lead time shown will apply to the manufacturer’s shipment to DigiKey. Upon receiving the product, DigiKey will ship to fill open orders.
Quantity
All prices are in EUR
Tube
QuantityUnit PriceExt Price
8005,15284 €4.122,27 €
Manufacturers Standard Package
Note: Due to DigiKey value-add services the packaging type may change when product is purchased at quantities beneath the standard package.
Unit Price without VAT:5,15284 €
Unit Price with VAT:6,13188 €