Name: ISG0616N10NM5HSCATMA1
Brand: Infineon Technologies
SKU: 448-ISG0616N10NM5HSCATMA1TR-ND
Price: 6.0571 EUR
Availability: OutOfStock

Mosfet Array 100V 19A (Ta), 139A (Tc) 3W (Ta), 167W (Tc) Surface Mount PG-WHITFN-10-1

Image shown is a representation only. Exact specifications should be obtained from the product data sheet.

ISG0616N10NM5HSCATMA1
DigiKey Part Number	448-ISG0616N10NM5HSCATMA1TR-ND - Tape & Reel (TR) 448-ISG0616N10NM5HSCATMA1CT-ND - Cut Tape (CT) 448-ISG0616N10NM5HSCATMA1DKR-ND - Digi-Reel®
Manufacturer	Infineon Technologies
Manufacturer Product Number	ISG0616N10NM5HSCATMA1
Description	MOSFET 2N-CH 100V 19A 10WHITFN
Manufacturer Standard Lead Time	48 Weeks
Customer Reference
Detailed Description	Mosfet Array 100V 19A (Ta), 139A (Tc) 3W (Ta), 167W (Tc) Surface Mount PG-WHITFN-10-1
Datasheet	Datasheet

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Category Discrete Semiconductor Products Transistors FETs, MOSFETs FET, MOSFET Arrays	Rds On (Max) @ Id, Vgs 4mOhm @ 50A, 10V
Manufacturer Infineon Technologies	Vgs(th) (Max) @ Id 3.8V @ 85µA
Series OptiMOS™ 5	Gate Charge (Qg) (Max) @ Vgs 78nC @ 10V
Packaging Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Input Capacitance (Ciss) (Max) @ Vds 4800pF @ 50V
Part Status Active	Power - Max 3W (Ta), 167W (Tc)
Technology MOSFET (Metal Oxide)	Operating Temperature -55°C ~ 175°C (TJ)
Configuration 2 N-Channel (Half Bridge)	Mounting Type Surface Mount
Drain to Source Voltage (Vdss) 100V	Package / Case 10-PowerWDFN
Current - Continuous Drain (Id) @ 25°C 19A (Ta), 139A (Tc)	Supplier Device Package PG-WHITFN-10-1