N-Channel 20 V 120A (Tc) 89W (Tc) Through Hole IPAK
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N-Channel 20 V 120A (Tc) 89W (Tc) Through Hole IPAK
IPAK (TO-251)

IRLU3717PBF

DigiKey Part Number
IRLU3717PBF-ND
Manufacturer
Infineon Technologies
Manufacturer Product Number
IRLU3717PBF
Description
MOSFET N-CH 20V 120A I-PAK
Customer Reference
Detailed Description
N-Channel 20 V 120A (Tc) 89W (Tc) Through Hole IPAK
Datasheet
 Datasheet
Product Attributes
Type
Description
Select All
Category
Mfr
Infineon Technologies
Series
HEXFET®
Packaging
Tube
Part Status
Obsolete
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
20 V
Current - Continuous Drain (Id) @ 25°C
120A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V
Rds On (Max) @ Id, Vgs
4mOhm @ 15A, 10V
Vgs(th) (Max) @ Id
2.45V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
31 nC @ 4.5 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
2830 pF @ 10 V
FET Feature
-
Power Dissipation (Max)
89W (Tc)
Operating Temperature
-55°C ~ 175°C (TJ)
Grade
-
Qualification
-
Mounting Type
Through Hole
Supplier Device Package
IPAK
Package / Case
TO-251-3 Short Leads, IPAK, TO-251AA
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Obsolete
This product is no longer manufactured.