TO-220AB PKG
Image shown is a representation only. Exact specifications should be obtained from the product data sheet.

IRF630NPBF

Digi-Key Part Number
IRF630NPBF-ND
Manufacturer
Infineon Technologies
Manufacturer Product Number
IRF630NPBF
Description
MOSFET N-CH 200V 9.3A TO220AB
Detailed Description
N-Channel 200 V 9.3A (Tc) 82W (Tc) Through Hole TO-220AB
Customer Reference
Datasheet Datasheet
Product Attributes
Type
Description
Select
Category
Mfr
Infineon Technologies
Series
HEXFET®
Package
Tube
Product Status
Active
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
200 V
Current - Continuous Drain (Id) @ 25°C
9.3A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
300mOhm @ 5.4A, 10V
Vgs(th) (Max) @ Id
4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
35 nC @ 10 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
575 pF @ 25 V
FET Feature
-
Power Dissipation (Max)
82W (Tc)
Operating Temperature
-55°C ~ 175°C (TJ)
Mounting Type
Through Hole
Supplier Device Package
TO-220AB
Package / Case
TO-220-3
Base Product Number
IRF630
Documents & Media
Resource TypeLink
DatasheetsIRF630N
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HTML DatasheetIRF630N
EDA / CAD ModelsIRF630NPBF by Ultra Librarian
Environmental & Export Classifications
AttributeDescription
RoHS StatusROHS3 Compliant
Moisture Sensitivity Level (MSL)1 (Unlimited)
REACH StatusREACH Unaffected
ECCNEAR99
HTSUS8541.29.0095
All prices are in EUR
Tube
QtyUnit PriceExt Price
11,03000 €1,03 €
100,92100 €9,21 €
1000,71780 €71,78 €
5000,59294 €296,47 €
1.0000,52013 €520,13 €
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Additional Resources
AttributeDescription
Other Names
*IRF630NPBF
SP001564792
Standard Package50