Name: IRF5210PBF
Brand: Infineon Technologies
SKU: IRF5210PBF-ND
Price: 3.4867 EUR
Availability: InStock

Image shown is a representation only. Exact specifications should be obtained from the product data sheet.

IRF5210PBF
DigiKey Part Number	IRF5210PBF-ND
Manufacturer	Infineon Technologies
Manufacturer Product Number	IRF5210PBF
Description	MOSFET P-CH 100V 40A TO220AB
Manufacturer Standard Lead Time	25 Weeks
Customer Reference
Detailed Description	P-Channel 100 V 40A (Tc) 200W (Tc) Through Hole TO-220AB
Datasheet	Datasheet
EDA/CAD Models	IRF5210PBF Models

Product Attributes

Type	Description	Select All
Category	Discrete Semiconductor Products Transistors FETs, MOSFETs Single FETs, MOSFETs
Mfr	Infineon Technologies
Series	HEXFET®
Packaging	Tube
Part Status	Active
FET Type	P-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	100 V
Current - Continuous Drain (Id) @ 25°C	40A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	10V
Rds On (Max) @ Id, Vgs	60mOhm @ 24A, 10V
Vgs(th) (Max) @ Id	4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	180 nC @ 10 V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	2700 pF @ 25 V
FET Feature	-
Power Dissipation (Max)	200W (Tc)
Operating Temperature	-55°C ~ 175°C (TJ)
Grade	-
Qualification	-
Mounting Type	Through Hole
Supplier Device Package	TO-220AB
Package / Case	TO-220-3
Base Product Number	IRF5210

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Tube