N-Channel 900 V 6.9A (Tc) 104W (Tc) Through Hole PG-TO262-3
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IPI90R800C3

DigiKey Part Number
IPI90R800C3-ND
Manufacturer
Manufacturer Product Number
IPI90R800C3
Description
MOSFET N-CH 900V 6.9A TO262-3
Customer Reference
Detailed Description
N-Channel 900 V 6.9A (Tc) 104W (Tc) Through Hole PG-TO262-3
Datasheet
 Datasheet
Product Attributes
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Category
Vgs(th) (Max) @ Id
3.5V @ 460µA
Mfr
Gate Charge (Qg) (Max) @ Vgs
42 nC @ 10 V
Series
Vgs (Max)
±20V
Packaging
Bulk
Input Capacitance (Ciss) (Max) @ Vds
1100 pF @ 100 V
Part Status
Obsolete
Power Dissipation (Max)
104W (Tc)
FET Type
Operating Temperature
-55°C ~ 150°C (TJ)
Technology
Mounting Type
Through Hole
Drain to Source Voltage (Vdss)
900 V
Supplier Device Package
PG-TO262-3
Current - Continuous Drain (Id) @ 25°C
Package / Case
Drive Voltage (Max Rds On, Min Rds On)
10V
Base Product Number
Rds On (Max) @ Id, Vgs
800mOhm @ 4.1A, 10V
Environmental & Export Classifications
Product Questions and Answers
Additional Resources
Obsolete
This product is no longer manufactured.