N-Channel 900 V 5.1A (Tc) 83W (Tc) Through Hole PG-TO262-3-1
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IPI90R1K2C3XKSA2

DigiKey Part Number
IPI90R1K2C3XKSA2-ND
Manufacturer
Manufacturer Product Number
IPI90R1K2C3XKSA2
Description
MOSFET N-CH 900V 5.1A TO262-3
Customer Reference
Detailed Description
N-Channel 900 V 5.1A (Tc) 83W (Tc) Through Hole PG-TO262-3-1
Datasheet
 Datasheet
EDA/CAD Models
IPI90R1K2C3XKSA2 Models
Product Attributes
Type
Description
Select All
Category
Mfr
Series
Packaging
Tube
Part Status
Obsolete
FET Type
Technology
Drain to Source Voltage (Vdss)
900 V
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
1.2Ohm @ 2.8A, 10V
Vgs(th) (Max) @ Id
3.5V @ 310µA
Gate Charge (Qg) (Max) @ Vgs
28 nC @ 10 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
710 pF @ 100 V
FET Feature
-
Power Dissipation (Max)
83W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
Grade
-
Qualification
-
Mounting Type
Through Hole
Supplier Device Package
PG-TO262-3-1
Package / Case
Base Product Number
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Obsolete
Marketplace Stock: 12.038 View Now
This product is no longer manufactured.

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