IPI65R110CFDXKSA1 is Obsolete and no longer manufactured.
Available Substitutes:

Similar


STMicroelectronics
In Stock: 0
Unit Price: 1,39096 €
Datasheet
N-Channel 650 V 31.2A (Tc) 277.8W (Tc) Through Hole PG-TO262-3
Image shown is a representation only. Exact specifications should be obtained from the product data sheet.
N-Channel 650 V 31.2A (Tc) 277.8W (Tc) Through Hole PG-TO262-3
AUIRFSL6535
TO-262-3

IPI65R110CFDXKSA1

DigiKey Part Number
IPI65R110CFDXKSA1-ND
Manufacturer
Manufacturer Product Number
IPI65R110CFDXKSA1
Description
MOSFET N-CH 650V 31.2A TO262-3
Customer Reference
Detailed Description
N-Channel 650 V 31.2A (Tc) 277.8W (Tc) Through Hole PG-TO262-3
Datasheet
 Datasheet
Product Attributes
Filter Similar Products
Show Empty Attributes
Category
Vgs(th) (Max) @ Id
4.5V @ 1.3mA
Mfr
Gate Charge (Qg) (Max) @ Vgs
118 nC @ 10 V
Series
Vgs (Max)
±20V
Packaging
Tube
Input Capacitance (Ciss) (Max) @ Vds
3240 pF @ 100 V
Part Status
Obsolete
Power Dissipation (Max)
277.8W (Tc)
FET Type
Operating Temperature
-55°C ~ 150°C (TJ)
Technology
Mounting Type
Through Hole
Drain to Source Voltage (Vdss)
650 V
Supplier Device Package
PG-TO262-3
Current - Continuous Drain (Id) @ 25°C
Package / Case
Drive Voltage (Max Rds On, Min Rds On)
10V
Base Product Number
Rds On (Max) @ Id, Vgs
110mOhm @ 12.7A, 10V
Environmental & Export Classifications
Product Questions and Answers
Additional Resources
Substitutes (1)
Part NumberManufacturerQuantity AvailableDigiKey Part NumberUnit PriceSubstitute Type
STI33N60M2STMicroelectronics0497-15016-5-ND1,39096 €Similar
Obsolete
This product is no longer manufactured. View Substitutes