N-Channel 55 V 100A (Tc) 300W (Tc) Through Hole PG-TO262-3
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N-Channel 55 V 100A (Tc) 300W (Tc) Through Hole PG-TO262-3
AUIRFSL6535
TO-262-3

IPI100N06S3L-03

DigiKey Part Number
IPI100N06S3L-03IN-ND
Manufacturer
Infineon Technologies
Manufacturer Product Number
IPI100N06S3L-03
Description
MOSFET N-CH 55V 100A TO262-3
Customer Reference
Detailed Description
N-Channel 55 V 100A (Tc) 300W (Tc) Through Hole PG-TO262-3
Datasheet
 Datasheet
Product Attributes
Type
Description
Select All
Category
Mfr
Infineon Technologies
Series
OptiMOS™
Packaging
Tube
Part Status
Obsolete
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
55 V
Current - Continuous Drain (Id) @ 25°C
100A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
5V, 10V
Rds On (Max) @ Id, Vgs
3mOhm @ 80A, 10V
Vgs(th) (Max) @ Id
2.2V @ 230µA
Gate Charge (Qg) (Max) @ Vgs
550 nC @ 10 V
Vgs (Max)
±16V
Input Capacitance (Ciss) (Max) @ Vds
26240 pF @ 25 V
FET Feature
-
Power Dissipation (Max)
300W (Tc)
Operating Temperature
-55°C ~ 175°C (TJ)
Grade
Automotive
Qualification
AEC-Q101
Mounting Type
Through Hole
Supplier Device Package
PG-TO262-3
Package / Case
TO-262-3 Long Leads, I2PAK, TO-262AA
Base Product Number
IPI100N
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Obsolete
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This product is no longer manufactured.

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