N-Channel 60 V 50A (Tc) 79W (Tc) Through Hole PG-TO262-3-1
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IPI084N06L3GXKSA1

DigiKey Part Number
IPI084N06L3GXKSA1-ND
Manufacturer
Infineon Technologies
Manufacturer Product Number
IPI084N06L3GXKSA1
Description
MOSFET N-CH 60V 50A TO262-3
Customer Reference
Detailed Description
N-Channel 60 V 50A (Tc) 79W (Tc) Through Hole PG-TO262-3-1
Datasheet
 Datasheet
Product Attributes
Type
Description
Select All
Category
Mfr
Infineon Technologies
Series
OptiMOS™
Packaging
Tube
Part Status
Obsolete
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
60 V
Current - Continuous Drain (Id) @ 25°C
50A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V
Rds On (Max) @ Id, Vgs
8.4mOhm @ 50A, 10V
Vgs(th) (Max) @ Id
2.2V @ 34µA
Gate Charge (Qg) (Max) @ Vgs
29 nC @ 4.5 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
4900 pF @ 30 V
FET Feature
-
Power Dissipation (Max)
79W (Tc)
Operating Temperature
-55°C ~ 175°C (TJ)
Grade
-
Qualification
-
Mounting Type
Through Hole
Supplier Device Package
PG-TO262-3-1
Package / Case
TO-262-3 Long Leads, I2PAK, TO-262AA
Base Product Number
IPI084N
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Obsolete
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This product is no longer manufactured.

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