N-Channel 200 V 5.5A (Tc) 40W (Tc) Through Hole PG-TO220-3
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BUZ73AL

DigiKey Part Number
BUZ73ALIN-ND
Manufacturer
Infineon Technologies
Manufacturer Product Number
BUZ73AL
Description
MOSFET N-CH 200V 5.5A TO220-3
Customer Reference
Detailed Description
N-Channel 200 V 5.5A (Tc) 40W (Tc) Through Hole PG-TO220-3
Datasheet
 Datasheet
Product Attributes
Type
Description
Select All
Category
Mfr
Infineon Technologies
Series
SIPMOS®
Packaging
Tube
Part Status
Obsolete
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
200 V
Current - Continuous Drain (Id) @ 25°C
5.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
5V
Rds On (Max) @ Id, Vgs
600mOhm @ 3.5A, 5V
Vgs(th) (Max) @ Id
2V @ 1mA
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
840 pF @ 25 V
FET Feature
-
Power Dissipation (Max)
40W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
Grade
-
Qualification
-
Mounting Type
Through Hole
Supplier Device Package
PG-TO220-3
Package / Case
TO-220-3
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Obsolete
This product is no longer manufactured.