N-Channel 650 V 20A (Tc) 40W (Tc) Through Hole TO-220F
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GC20N65FD

DigiKey Part Number
4822-GC20N65FD-ND
Manufacturer
Goford Semiconductor
Manufacturer Product Number
GC20N65FD
Description
MOSFET N-CH 650V 20A 40W TO-220
Customer Reference
Detailed Description
N-Channel 650 V 20A (Tc) 40W (Tc) Through Hole TO-220F
Datasheet
 Datasheet
Product Attributes
Type
Description
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Category
Mfr
Goford Semiconductor
Series
-
Packaging
Tube
Part Status
Active
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
650 V
Current - Continuous Drain (Id) @ 25°C
20A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
190mOhm @ 10A, 10V
Vgs(th) (Max) @ Id
5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
39 nC @ 10 V
Vgs (Max)
±30V
Input Capacitance (Ciss) (Max) @ Vds
1729 pF @ 100 V
FET Feature
-
Power Dissipation (Max)
40W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
Grade
-
Qualification
-
Mounting Type
Through Hole
Supplier Device Package
TO-220F
Package / Case
TO-220-3 Full Pack
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In-Stock: 5.000
Non-Cancelable/Non-Returnable
MARKETPLACE PRODUCT
Will ship in approximately 5 days from GOFORD SEMICONDUCTOR
A separate shipping fee may apply.
Quantity
All prices are in EUR
Tube
QuantityUnit PriceExt Price
1.0001,13513 €1.135,13 €
15.0001,04735 €15.710,25 €
30.0000,94322 €28.296,60 €
Note: Due to DigiKey value-add services the packaging type may change when product is purchased at quantities beneath the standard package.
Unit Price without VAT:1,13513 €
Unit Price with VAT:1,35080 €