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N-Channel 650 V 19A (Tc) 35W (Tc) Through Hole TO-220F
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GC190N65FF

DigiKey Part Number
3141-GC190N65FF-ND
Manufacturer
Goford Semiconductor
Manufacturer Product Number
GC190N65FF
Description
MOSFET,N-CH,650V,19A,35W,TO-220F
Manufacturer Standard Lead Time
8 Weeks
Customer Reference
Detailed Description
N-Channel 650 V 19A (Tc) 35W (Tc) Through Hole TO-220F
Datasheet
 Datasheet
Product Attributes
Type
Description
Select All
Category
Mfr
Goford Semiconductor
Series
-
Packaging
Tube
Part Status
Active
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
650 V
Current - Continuous Drain (Id) @ 25°C
19A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
190mOhm @ 10A, 10V
Vgs(th) (Max) @ Id
4.6V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
36 nC @ 10 V
Vgs (Max)
±30V
Input Capacitance (Ciss) (Max) @ Vds
1100 pF @ 100 V
FET Feature
-
Power Dissipation (Max)
35W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
Grade
-
Qualification
-
Mounting Type
Through Hole
Supplier Device Package
TO-220F
Package / Case
TO-220-3 Full Pack
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In-Stock: 50
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Quantity
All prices are in EUR
Tube
QuantityUnit PriceExt Price
13,07000 €3,07 €
102,00200 €20,02 €
1001,39170 €139,17 €
5001,13118 €565,59 €
1.0001,04749 €1.047,49 €
2.0000,97714 €1.954,28 €
5.0000,91116 €4.555,80 €
Note: Due to DigiKey value-add services the packaging type may change when product is purchased at quantities beneath the standard package.
Unit Price without VAT:3,07000 €
Unit Price with VAT:3,65330 €