1200 V 45A (Tc) 282W (Tc) Through Hole TO-247AB
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1200 V 45A (Tc) 282W (Tc) Through Hole TO-247AB
GA20SICP12-247

GA20SICP12-247

DigiKey Part Number
1913-GA20SICP12-247-ND
Manufacturer
Navitas Semiconductor, Inc.
Manufacturer Product Number
GA20SICP12-247
Description
TRANS SJT 1200V 45A TO247AB
Customer Reference
Detailed Description
1200 V 45A (Tc) 282W (Tc) Through Hole TO-247AB
Datasheet
 Datasheet
Product Attributes
Type
Description
Select All
Category
Mfr
Navitas Semiconductor, Inc.
Series
-
Packaging
Tube
Part Status
Obsolete
FET Type
-
Technology
SiC (Silicon Carbide Junction Transistor)
Drain to Source Voltage (Vdss)
1200 V
Current - Continuous Drain (Id) @ 25°C
45A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
-
Rds On (Max) @ Id, Vgs
50mOhm @ 20A
Vgs(th) (Max) @ Id
-
Vgs (Max)
-
Input Capacitance (Ciss) (Max) @ Vds
3091 pF @ 800 V
FET Feature
-
Power Dissipation (Max)
282W (Tc)
Operating Temperature
-55°C ~ 175°C (TJ)
Grade
-
Qualification
-
Mounting Type
Through Hole
Supplier Device Package
TO-247AB
Package / Case
TO-247-3
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Obsolete
This product is no longer manufactured.