N-Channel 650 V 3.2A (Tc) 54W (Tc) Through Hole TO-251
Image shown is a representation only. Exact specifications should be obtained from the product data sheet.

DID3A2N65

DigiKey Part Number
4878-DID3A2N65-ND
Manufacturer
Diotec Semiconductor
Manufacturer Product Number
DID3A2N65
Description
MOSFET N-CH 650V 3.2A TO-251-3
Manufacturer Standard Lead Time
7 Weeks
Customer Reference
Detailed Description
N-Channel 650 V 3.2A (Tc) 54W (Tc) Through Hole TO-251
Datasheet
 Datasheet
EDA/CAD Models
DID3A2N65 Models
Product Attributes
Type
Description
Select All
Category
Mfr
Diotec Semiconductor
Series
-
Packaging
Bulk
Part Status
Active
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
650 V
Current - Continuous Drain (Id) @ 25°C
3.2A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
2.6Ohm @ 2A, 10V
Vgs(th) (Max) @ Id
4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
25 nC @ 10 V
Vgs (Max)
±30V
Input Capacitance (Ciss) (Max) @ Vds
581 pF @ 25 V
FET Feature
-
Power Dissipation (Max)
54W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
Grade
-
Qualification
-
Mounting Type
Through Hole
Supplier Device Package
TO-251
Package / Case
TO-251-3 Short Leads, IPAK, TO-251AA
Product Questions and Answers

See what engineers are asking, ask your own questions, or help out a member of the DigiKey engineering community

0 In Stock
Check Lead Time
Request Stock Notification
Quantity
All prices are in EUR
Bulk
QuantityUnit PriceExt Price
10,71000 €0,71 €
750,30267 €22,70 €
1500,26793 €40,19 €
5250,21830 €114,61 €
1.0500,19676 €206,60 €
2.0250,17951 €363,51 €
5.0250,15984 €803,20 €
10.0500,14757 €1.483,08 €
50.0250,13329 €6.667,83 €
Manufacturers Standard Package
Unit Price without VAT:0,71000 €
Unit Price with VAT:0,84490 €