Bipolar (BJT) Transistor NPN 80 V 500 mA 50MHz 600 mW Through Hole TO-39
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Bipolar (BJT) Transistor NPN 80 V 500 mA 50MHz 600 mW Through Hole TO-39
TO-205AD, TO-39-3 Metal Can

2N699 TIN/LEAD

DigiKey Part Number
1514-2N699TIN/LEAD-ND
Manufacturer
Central Semiconductor Corp
Manufacturer Product Number
2N699 TIN/LEAD
Description
TH TRANSISTOR-SMALL SIGNAL (<=1A
Manufacturer Standard Lead Time
6 Weeks
Customer Reference
Detailed Description
Bipolar (BJT) Transistor NPN 80 V 500 mA 50MHz 600 mW Through Hole TO-39
Product Attributes
Type
Description
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Category
Mfr
Central Semiconductor Corp
Series
-
Packaging
Box
Part Status
Active
Transistor Type
NPN
Current - Collector (Ic) (Max)
500 mA
Voltage - Collector Emitter Breakdown (Max)
80 V
Vce Saturation (Max) @ Ib, Ic
5V @ 15mA, 150mA
Current - Collector Cutoff (Max)
2µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce
40 @ 150mA, 10V
Power - Max
600 mW
Frequency - Transition
50MHz
Operating Temperature
-65°C ~ 175°C (TJ)
Grade
-
Qualification
-
Mounting Type
Through Hole
Package / Case
TO-205AD, TO-39-3 Metal Can
Supplier Device Package
TO-39
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Quantity
All prices are in EUR
Box
QuantityUnit PriceExt Price
1.0001,11843 €1.118,43 €
Unit Price without VAT:1,11843 €
Unit Price with VAT:1,33093 €