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XHP™ 2 2,300 V CoolSiC™ MOSFET
Infineon Technologies MOSFETs feature higher power density and efficiency enabled by their 2,300 V CoolSiC™ MOSFET technology, combined with robust, XT interconnection for reliability, top performance, and an enhanced lifetime
The Infineon Technologies XHP™ 2 CoolSiC™ MOSFET 2,300 V, 1.0 mΩ module offers a half-bridge topology in a low-inductive, standardized package. It leverages robust .XT interconnection technology for enhanced lifetime and best-in-class reliability and is also available with pre-applied thermal interface material (TIM) to simplify assembly and improve thermal consistency.
Features
- 2.3 kV trenched gate CoolSiC™ MOSFET with field-proven long-term stability and reliability
- Low switching and conduction losses with RDS(ON) down to 1.0 mΩ (at +25°C)
- Low inductive, standardized XHP™ 2 package
- .XT interconnection technology for top-notch reliability and extended lifetime
Applications
- Energy storage systems
- Traction
- Renewables
- Photovoltaic inverters
XHP™ 2 2300 V CoolSiC™ MOSFET
| Image | Manufacturer Part Number | Description | Available Quantity | Price | View Details | |
|---|---|---|---|---|---|---|
 |  | FF1000UXTR23T2M1PBPSA1 | MOSFET 2N-CH 2300V AG-XHP2K23 | 4 - Immediate | $4,061.74 | View Details |
| | FF1300UXTR23T2M1PBPSA1 | MOSFET 2N-CH 2300V AG-XHP2K23 | 4 - Immediate | $3,444.13 | View Details |
| | FF2000UXTR23T2M1BPSA1 | MOSFET 2N-CH 2300V AG-XHP2K23 | 3 - Immediate | $2,754.75 | View Details |
| | FF2000UXTR23T2M1PBPSA1 | MOSFET 2N-CH 2300V AG-XHP2K23 | 4 - Immediate | $2,784.73 | View Details |
Updated: 2026-02-05
Published: 2026-01-22
Germany