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INSTRUMENTS
6
TPS2546
SLVSBJ2C –FEBRUARY 2013–REVISED JULY 2016
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Electrical Characteristics (continued)
Unless otherwise noted: –40 ≤TJ≤125°C, 4.5 V ≤VIN ≤5.5 V, VEN = VIN, VILIM_SEL = VIN, VCTL1 = VCTL2 = VCTL3 = VIN. RFAULT =
RSTATUS = 10 kΩ, RILIM_HI = 20 kΩ, RILIM_LO = 80.6 kΩ. Positive currents are into pins. Typical values are at 25°C. All voltages
are with respect to GND.
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
SUPPLY CURRENT
IIN_OFF Disabled IN supply current VEN = 0 V, VOUT = 0 V, –40 ≤TJ≤85°C 0.1 2 µA
IIN_ON Enabled IN supply current
VCTL1 = VCTL2 = VIN, VCTL3 = 0 V, VILIM_SEL = 0 V 165 220
µA
VCTL1 = VCTL2 = VCTL3 = VIN, VILIM_SEL = 0 V 175 230
VCTL1 = VCTL2 = VIN, VCTL3 = 0 V, VILIM_SEL = VIN 185 240
VCTL1 = VCTL2 = VIN, VCTL3 = VIN, VILIM_SEL = VIN 195 250
VCTL1 = 0 V, VCTL2 = VCTL3 = VIN 215 270
UNDERVOLTAGE LOCKOUT
VUVLO IN rising UVLO threshold voltage 3.9 4.1 4.3 V
Hysteresis(2) 100 mV
FAULT
Output low voltage IFAULT = 1 mA 100 mV
OFF-state leakage VFAULT = 5.5 V 1 µA
Overcurrent FAULT rising and
falling deglitch 5 8.2 12 ms
STATUS
Output low voltage ISTATUS = 1 mA 100 mV
OFF-state leakage VSTATUS = 5.5 V 1 µA
THERMAL SHUTDOWN
Thermal shutdown threshold 155
°C
Thermal shutdown threshold in
current-limit 135
Hysteresis(2) 20
(1) The resistance in series with the parasitic capacitance to GND is typically 250 Ω.
(2) The resistance in series with the parasitic capacitance to GND is typically 150 Ω
(3) These parameters are provided for reference only and do not constitute part of TI's published device specifications for purposes of TI's
product warranty.
6.6 Electrical Characteristics: High-Bandwidth Switch
Unless otherwise noted: –40 ≤TJ≤125°C, 4.5 V ≤VIN ≤5.5 V, VEN = VIN, VILIM_SEL = VIN, VCTL1 = VCTL2 = VCTL3 = VIN. RFAULT =
RSTATUS = 10 kΩ, RILIM_HI = 20 kΩ, RILIM_LO = 80.6 kΩ. Positive currents are into pins. Typical values are at 25°C. All voltages
are with respect to GND.
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
HIGH-BANDWIDTH ANALOG SWITCH
DP/DM switch ON resistance VDP/DM_OUT = 0 V, IDP/DM_IN = 30 mA 2 4 Ω
VDP/DM_OUT = 2.4 V, IDP/DM_IN = –15 mA 3 6
Switch resistance mismatch between
DP / DM channels
VDP/DM_OUT = 0 V, IDP/DM_IN = 30 mA 0.05 0.15 Ω
VDP/DM_OUT = 2.4 V, IDP/DM_IN = –15 mA 0.05 0.15
DP/DM switch OFF-state capacitance(1) VEN= 0 V, VDP/DM_IN = 0.3 V, Vac = 0.6 Vpk–pk,
f = 1 MHz 3 3.6 pF
DP/DM switch ON-state capacitance(2) VDP/DM_IN = 0.3 V, Vac = 0.6 Vpk-pk, f = 1 MHz 5.4 6.2 pF
OIRR OFF-state isolation(3) VEN= 0 V, f = 250 MHz 33 dB
XTALK ON-state cross channel isolation(3) f = 250 MHz 52 dB
OFF-state leakage current VEN = 0 V, VDP/DM_IN = 3.6 V, VDP/DM_OUT = 0 V,
measure IDP/DM_OUT 0.1 1.5 µA
BW Bandwidth (–3 dB)(3) RL= 50 Ω2.6 GHz
tpd Propagation delay(3) 0.25 ns