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This development board is in a monolithic half bridge topology with onboard gate drives, featuring the EPC2106 eGaN (Enhancement-mode Gallium Nitride) Integrated Dual FET. The purpose of these development boards is to simplify the evaluation process of these eGaN FETs by including all the critical components on a single board that can be easily connected into any existing converter.The development board is 2" x 1.5" and contains a dual integrated eGaN FET, in a half bridge configuration using the Texas Instruments LM5113 gate driver, supply and bypass capacitors.
The board contains all critical components and layout for optimal switching performance. There are also various probe points to facilitate simple waveform measurement and efficiency calculation. A complete block diagram of the circuit is given in Figure 1.
For more information on the EPC2106 eGaN Integrated Dual FET, please refer to the datasheets which should be read in conjunction with this quick start guide.
|Sub-Category||Power Output Stages (H-Bridge, Half Bridge)|
|Eval Board Part Number||917-1111-ND|
|Eval Board Supplier||EPC|
Normally In Stock
1 Half H-Bridge
|Voltage Out Range||
0 ~ 100 V
Internal Bootstrap Circuit
Shoot Through Protection
Under Voltage Protection (UVP)
|Switching Frequency (Max)||
|Component Count + Extras||
24 + 12
|Main I.C. Base Part||
|Date Created By Author||2015-08|
|Date Added To Library||2018-08|
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