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SIR404DP-T1-GE3 N-Channel 20V 60A (Tc) 6.25W (Ta), 104W (Tc) Surface Mount PowerPAK® SO-8
Price & Procurement
6.939 In Stock
Can ship immediately
 

Quantity
All prices are in EUR.
Price Break Unit Price Extended Price
1 1,78000 1,78 €
10 1,59100 15,91 €
100 1,27900 127,90 €
500 1,05082 525,41 €
1.000 0,87069 870,69 €

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Alternate Package
  • Tape & Reel (TR)  : SIR404DP-T1-GE3TR-ND
  • Minimum Quantity: 3.000
  • Quantity Available: 6.000 - Immediate
  • Unit Price: 0,78703 €
  • Digi-Reel®  : SIR404DP-T1-GE3DKR-ND
  • Minimum Quantity: 1
  • Quantity Available: 6.939 - Immediate
  • Unit Price: Digi-Reel®

SIR404DP-T1-GE3

Datasheet
Digi-Key Part Number SIR404DP-T1-GE3CT-ND
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Manufacturer

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Manufacturer Part Number SIR404DP-T1-GE3
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Description MOSFET N-CH 20V 60A PPAK SO-8
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Manufacturer Standard Lead Time 14 Weeks
Detailed Description

N-Channel 20V 60A (Tc) 6.25W (Ta), 104W (Tc) Surface Mount PowerPAK® SO-8

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Documents & Media
Datasheets SIR404DP
Video File MOSFET Technologies for Power Conversion
PCN Assembly/Origin Multiple Fabracation Changes09/Jul/2014
Product Attributes
Type Description Select All
Categories
Manufacturer Vishay Siliconix
Series TrenchFET®
Packaging Cut Tape (CT) 
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 20V
Current - Continuous Drain (Id) @ 25°C 60A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 2.5V, 10V
Rds On (Max) @ Id, Vgs 1.6mOhm @ 20A, 10V
Vgs(th) (Max) @ Id 1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 97nC @ 4,5V
Vgs (Max) ±12V
Input Capacitance (Ciss) (Max) @ Vds 8130pF @ 10V
FET Feature -
Power Dissipation (Max) 6.25W (Ta), 104W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package PowerPAK® SO-8
Package / Case PowerPAK® SO-8
 
Environmental & Export Classifications
Lead Free Status / RoHS Status Lead free / ROHS3 Compliant
Moisture Sensitivity Level (MSL) 1 (Unlimited)
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Additional Resources
Standard Package 1
Other Names SIR404DP-T1-GE3CT