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SI9933CDY-T1-GE3 Mosfet Array 2 P-Channel (Dual) 20V 4A 3.1W Surface Mount 8-SO
Price & Procurement
47.276 In Stock
Can ship immediately
 

Quantity
All prices are in EUR.
Price Break Unit Price Extended Price
1 0,51000 0,51 €
10 0,45000 4,50 €
25 0,42280 10,57 €
100 0,30680 30,68 €
500 0,25634 128,17 €
1.000 0,21816 218,16 €

Submit a request for quotation on quantities greater than those displayed.

Unit Price
0,51000 €

Excludes VAT

0,59160 €

Includes VAT

Alternate Package
  • Tape & Reel (TR)  : SI9933CDY-T1-GE3TR-ND
  • Minimum Quantity: 2.500
  • Quantity Available: 45.000 - Immediate
  • Unit Price: 0,20453 €
  • Digi-Reel®  : SI9933CDY-T1-GE3DKR-ND
  • Minimum Quantity: 1
  • Quantity Available: 47.276 - Immediate
  • Unit Price: Digi-Reel®

SI9933CDY-T1-GE3

Datasheet
Digi-Key Part Number SI9933CDY-T1-GE3CT-ND
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Manufacturer

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Manufacturer Part Number SI9933CDY-T1-GE3
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Description MOSFET 2P-CH 20V 4A 8-SOIC
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Manufacturer Standard Lead Time 14 Weeks
Detailed Description

Mosfet Array 2 P-Channel (Dual) 20V 4A 3.1W Surface Mount 8-SO

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Customer Reference
Documents & Media
Datasheets SI9933CDY
HTML Datasheet SI9933CDY
EDA / CAD Models SI9933CDY-T1-GE3 by Ultra Librarian
Product Attributes
Type Description Select All
Categories
Manufacturer Vishay Siliconix
Series TrenchFET®
Packaging Cut Tape (CT) 
Part Status Active
FET Type 2 P-Channel (Dual)
FET Feature Logic Level Gate
Drain to Source Voltage (Vdss) 20V
Current - Continuous Drain (Id) @ 25°C 4A
Rds On (Max) @ Id, Vgs 58mOhm @ 4.8A, 4.5V
Vgs(th) (Max) @ Id 1.4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 26nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds 665pF @ 10V
Power - Max 3.1W
Operating Temperature -50°C ~ 150°C (TJ)
Mounting Type Surface Mount
Package / Case 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package 8-SO
Base Part Number SI9933
 
Environmental & Export Classifications
RoHS Status ROHS3 Compliant
Moisture Sensitivity Level (MSL) 1 (Unlimited)
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Additional Resources
Standard Package 1
Other Names SI9933CDY-T1-GE3CT