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SI8808DB-T2-E1 N-Channel 30V 500mW (Ta) Surface Mount 4-Microfoot
Price & Procurement
29.985 In Stock
Can ship immediately
 

Quantity
All prices are in EUR.
Price Break Unit Price Extended Price
1 0,36000 0,36 €
10 0,30800 3,08 €
25 0,28760 7,19 €
100 0,21360 21,36 €
500 0,16678 83,39 €
1.000 0,13555 135,55 €

Submit a request for quotation on quantities greater than those displayed.

Unit Price
0,36000 €

Excludes VAT

0,41760 €

Includes VAT

Alternate Package
  • Tape & Reel (TR)  : SI8808DB-T2-E1TR-ND
  • Minimum Quantity: 3.000
  • Quantity Available: 27.000 - Immediate
  • Unit Price: 0,12734 €
  • Digi-Reel®  : SI8808DB-T2-E1DKR-ND
  • Minimum Quantity: 1
  • Quantity Available: 29.985 - Immediate
  • Unit Price: Digi-Reel®

SI8808DB-T2-E1

Datasheet
Digi-Key Part Number SI8808DB-T2-E1CT-ND
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Manufacturer

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Manufacturer Part Number SI8808DB-T2-E1
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Description MOSFET N-CH 30V MICROFOOT
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Manufacturer Standard Lead Time 8 Weeks
Detailed Description

N-Channel 30V 500mW (Ta) Surface Mount 4-Microfoot

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Customer Reference
Documents & Media
Datasheets Si8808DB
Video File MOSFET Technologies for Power Conversion
HTML Datasheet Si8808DB
Product Attributes
Type Description Select All
Categories
Manufacturer Vishay Siliconix
Series TrenchFET®
Packaging Cut Tape (CT) 
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 30V
Current - Continuous Drain (Id) @ 25°C -
Drive Voltage (Max Rds On, Min Rds On) 1.5V, 4.5V
Rds On (Max) @ Id, Vgs 95mOhm @ 1A, 4.5V
Vgs(th) (Max) @ Id 900mV @ 250µA
Gate Charge (Qg) (Max) @ Vgs 10nC @ 8V
Vgs (Max) ±8V
Input Capacitance (Ciss) (Max) @ Vds 330pF @ 15V
FET Feature -
Power Dissipation (Max) 500mW (Ta)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package 4-Microfoot
Package / Case 4-UFBGA
Base Part Number SI8808
 
Environmental & Export Classifications
RoHS Status ROHS3 Compliant
Moisture Sensitivity Level (MSL) 1 (Unlimited)
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Additional Resources
Standard Package 1
Other Names SI8808DB-T2-E1CT