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SI7898DP-T1-E3 N-Channel 150V 3A (Ta) 1.9W (Ta) Surface Mount PowerPAK® SO-8
Price & Procurement
3.166 In Stock
Can ship immediately
 

Quantity
All prices are in EUR.
Price Break Unit Price Extended Price
1 1,54000 1,54 €
10 1,38800 13,88 €
25 1,30920 32,73 €
100 1,02100 102,10 €
250 0,99476 248,69 €
500 0,86388 431,94 €
1.000 0,73299 732,99 €

Submit a request for quotation on quantities greater than those displayed.

Unit Price
1,54000 €

Excludes VAT

1,78640 €

Includes VAT

Alternate Package
  • Tape & Reel (TR)  : SI7898DP-T1-E3TR-ND
  • Minimum Quantity: 3.000
  • Quantity Available: 3.000 - Immediate
  • Unit Price: 0,72252 €
  • Digi-Reel®  : SI7898DP-T1-E3DKR-ND
  • Minimum Quantity: 1
  • Quantity Available: 3.166 - Immediate
  • Unit Price: Digi-Reel®

SI7898DP-T1-E3

Datasheet
Digi-Key Part Number SI7898DP-T1-E3CT-ND
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Manufacturer

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Manufacturer Part Number SI7898DP-T1-E3
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Description MOSFET N-CH 150V 3A PPAK SO-8
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Manufacturer Standard Lead Time 14 Weeks
Detailed Description

N-Channel 150V 3A (Ta) 1.9W (Ta) Surface Mount PowerPAK® SO-8

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Documents & Media
Datasheets Si7898DP
Video File MOSFET Technologies for Power Conversion
HTML Datasheet Si7898DP
Product Attributes
Type Description Select All
Categories
Manufacturer Vishay Siliconix
Series TrenchFET®
Packaging Cut Tape (CT) 
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 150V
Current - Continuous Drain (Id) @ 25°C 3A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 6V, 10V
Rds On (Max) @ Id, Vgs 85mOhm @ 3.5A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 21nC @ 10V
Vgs (Max) ±20V
FET Feature -
Power Dissipation (Max) 1.9W (Ta)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package PowerPAK® SO-8
Package / Case PowerPAK® SO-8
Base Part Number SI7898
 
Environmental & Export Classifications
RoHS Status ROHS3 Compliant
Moisture Sensitivity Level (MSL) 1 (Unlimited)
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Additional Resources
Standard Package 1
Other Names SI7898DP-T1-E3CT