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SI4497DY-T1-GE3 P-Channel 30V 36A (Tc) 3.5W (Ta), 7.8W (Tc) Surface Mount 8-SO
Price & Procurement
955 In Stock
Can ship immediately
 

Quantity
All prices are in EUR.
Price Break Unit Price Extended Price
1 1,65000 1,65 €
10 1,47600 14,76 €
100 1,08610 108,61 €
500 0,91902 459,51 €
1.000 0,77977 779,77 €

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Alternate Package
  • Tape & Reel (TR)  : SI4497DY-T1-GE3TR-ND
  • Minimum Quantity: 2.500
  • Quantity Available: 0
  • Unit Price: 0,74624 €
  • Digi-Reel®  : SI4497DY-T1-GE3DKR-ND
  • Minimum Quantity: 1
  • Quantity Available: 955 - Immediate
  • Unit Price: Digi-Reel®

SI4497DY-T1-GE3

Datasheet
Digi-Key Part Number SI4497DY-T1-GE3CT-ND
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Manufacturer

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Manufacturer Part Number SI4497DY-T1-GE3
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Description MOSFET P-CH 30V 36A 8-SOIC
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Manufacturer Standard Lead Time 14 Weeks
Detailed Description

P-Channel 30V 36A (Tc) 3.5W (Ta), 7.8W (Tc) Surface Mount 8-SO

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Documents & Media
Datasheets SI4497DY
Video File MOSFET Technologies for Power Conversion
PCN Assembly/Origin Multiple Devices 11/Dec/2015
Product Attributes
Type Description Select All
Categories
Manufacturer Vishay Siliconix
Series TrenchFET®
Packaging Cut Tape (CT) 
Part Status Active
FET Type P-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 30V
Current - Continuous Drain (Id) @ 25°C 36A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Max) @ Id, Vgs 3.3mOhm @ 20A, 10V
Vgs(th) (Max) @ Id 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 285nC @ 10V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 9685pF @ 15V
FET Feature -
Power Dissipation (Max) 3.5W (Ta), 7.8W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package 8-SO
Package / Case 8-SOIC (0.154", 3.90mm Width)
 
Environmental & Export Classifications
Lead Free Status / RoHS Status Lead free / ROHS3 Compliant
Moisture Sensitivity Level (MSL) 1 (Unlimited)
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Additional Resources
Standard Package 1
Other Names SI4497DY-T1-GE3CT