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SI4431CDY-T1-GE3 P-Channel 30V 9A (Tc) 2.5W (Ta), 4.2W (Tc) Surface Mount 8-SO
Price & Procurement
27.679 In Stock
Can ship immediately
 

Quantity
All prices are in EUR.
Price Break Unit Price Extended Price
1 0,51000 0,51 €
10 0,45000 4,50 €
25 0,42280 10,57 €
100 0,30680 30,68 €
500 0,25634 128,17 €
1.000 0,21816 218,16 €

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Unit Price
0,51000 €

Excludes VAT

0,59160 €

Includes VAT

Alternate Package
  • Tape & Reel (TR)  : SI4431CDY-T1-GE3TR-ND
  • Minimum Quantity: 2.500
  • Quantity Available: 27.500 - Immediate
  • Unit Price: 0,20453 €
  • Digi-Reel®  : SI4431CDY-T1-GE3DKR-ND
  • Minimum Quantity: 1
  • Quantity Available: 27.679 - Immediate
  • Unit Price: Digi-Reel®

SI4431CDY-T1-GE3

Datasheet
Digi-Key Part Number SI4431CDY-T1-GE3CT-ND
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Manufacturer

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Manufacturer Part Number SI4431CDY-T1-GE3
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Description MOSFET P-CH 30V 9A 8-SOIC
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Manufacturer Standard Lead Time 14 Weeks
Detailed Description

P-Channel 30V 9A (Tc) 2.5W (Ta), 4.2W (Tc) Surface Mount 8-SO

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Customer Reference
Documents & Media
Datasheets SI4431CDY
Video File MOSFET Technologies for Power Conversion
HTML Datasheet SI4431CDY
Product Attributes
Type Description Select All
Categories
Manufacturer Vishay Siliconix
Series TrenchFET®
Packaging Cut Tape (CT) 
Part Status Active
FET Type P-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 30V
Current - Continuous Drain (Id) @ 25°C 9A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Max) @ Id, Vgs 32mOhm @ 7A, 10V
Vgs(th) (Max) @ Id 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 38nC @ 10V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 1006pF @ 15V
FET Feature -
Power Dissipation (Max) 2.5W (Ta), 4.2W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package 8-SO
Package / Case 8-SOIC (0.154", 3.90mm Width)
Base Part Number SI4431
 
Environmental & Export Classifications
RoHS Status ROHS3 Compliant
Moisture Sensitivity Level (MSL) 1 (Unlimited)
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Additional Resources
Standard Package 1
Other Names SI4431CDY-T1-GE3CT