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34,811 In Stock
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All prices are in EUR.
Price Break Unit Price Extended Price
1 0,44000 €0,44
10 0,37700 €3,77
25 0,35160 €8,79
100 0,28110 €28,11
500 0,22090 €110,45
1.000 0,17069 €170,69

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Unit Price
€0,44000

Excludes VAT

€0,52360

Includes VAT

Alternate Package
  • Tape & Reel (TR)  : SI2312BDS-T1-GE3TR-ND
  • Minimum Quantity: 3,000
  • Quantity Available: 33,000 - Immediate
  • Unit Price: €0.15563
  • Digi-Reel®  : SI2312BDS-T1-GE3DKR-ND
  • Minimum Quantity: 1
  • Quantity Available: 34,811 - Immediate
  • Unit Price: Digi-Reel®

SI2312BDS-T1-GE3

Datasheet
Digi-Key Part Number SI2312BDS-T1-GE3CT-ND
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Manufacturer

Vishay Siliconix

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Manufacturer Part Number SI2312BDS-T1-GE3
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Description MOSFET N-CH 20V 3.9A SOT23-3
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Detailed Description

N-Channel 20V 3.9A (Ta) 750mW (Ta) Surface Mount SOT-23-3 (TO-236)

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Customer Reference
Documents & Media
Datasheets Si2312BDS
Environmental Information Material Compliance
REACH 211 Cert, SVHC
HTML Datasheet Si2312BDS
EDA / CAD Models SI2312BDS-T1-GE3 by Ultra Librarian
Product Attributes
Type Description Select All
Categories
Manufacturer Vishay Siliconix
Series TrenchFET®
Packaging Cut Tape (CT) 
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 20V
Current - Continuous Drain (Id) @ 25°C 3.9A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 1.8V, 4.5V
Rds On (Max) @ Id, Vgs 31mOhm @ 5A, 4.5V
Vgs(th) (Max) @ Id 850mV @ 250µA
Gate Charge (Qg) (Max) @ Vgs 12nC @ 4.5V
Vgs (Max) ±8V
FET Feature -
Power Dissipation (Max) 750mW (Ta)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package SOT-23-3 (TO-236)
Package / Case TO-236-3, SC-59, SOT-23-3
Base Part Number SI2312
 
Environmental & Export Classifications
RoHS Status ROHS3 Compliant
Moisture Sensitivity Level (MSL) 1 (Unlimited)
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Additional Resources
Standard Package 1
Other Names SI2312BDS-T1-GE3CT