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SI2308BDS-T1-GE3 N-Channel 60V 2.3A (Tc) 1.09W (Ta), 1.66W (Tc) Surface Mount SOT-23-3 (TO-236)
Price & Procurement
36.390 In Stock
Can ship immediately
 

Quantity
All prices are in EUR.
Price Break Unit Price Extended Price
1 0,43000 0,43 €
10 0,36600 3,66 €
100 0,25410 25,41 €
500 0,19842 99,21 €
1.000 0,16128 161,28 €

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Alternate Package
  • Tape & Reel (TR)  : SI2308BDS-T1-GE3TR-ND
  • Minimum Quantity: 3.000
  • Quantity Available: 30.000 - Immediate
  • Unit Price: 0,14709 €
  • Digi-Reel®  : SI2308BDS-T1-GE3DKR-ND
  • Minimum Quantity: 1
  • Quantity Available: 36.445 - Immediate
  • Unit Price: Digi-Reel®

SI2308BDS-T1-GE3

Datasheet
Digi-Key Part Number SI2308BDS-T1-GE3CT-ND
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Manufacturer

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Manufacturer Part Number SI2308BDS-T1-GE3
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Description MOSFET N-CH 60V 2.3A SOT23-3
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Manufacturer Standard Lead Time 14 Weeks
Detailed Description

N-Channel 60V 2.3A (Tc) 1.09W (Ta), 1.66W (Tc) Surface Mount SOT-23-3 (TO-236)

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Documents & Media
Datasheets SI2308BDS
Video File MOSFET Technologies for Power Conversion
HTML Datasheet SI2308BDS
EDA / CAD Models Download from Ultra Librarian
Product Attributes
Type Description Select All
Categories
Manufacturer Vishay Siliconix
Series TrenchFET®
Packaging Cut Tape (CT) 
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 60V
Current - Continuous Drain (Id) @ 25°C 2.3A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Max) @ Id, Vgs 156mOhm @ 1.9A, 10V
Vgs(th) (Max) @ Id 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 6,8nC @ 10V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 190pF @ 30V
FET Feature -
Power Dissipation (Max) 1.09W (Ta), 1.66W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package SOT-23-3 (TO-236)
Package / Case TO-236-3, SC-59, SOT-23-3
 
Environmental & Export Classifications
Lead Free Status / RoHS Status Lead free / ROHS3 Compliant
Moisture Sensitivity Level (MSL) 1 (Unlimited)
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Additional Resources
Standard Package 1
Other Names SI2308BDS-T1-GE3CT