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SI1416EDH-T1-GE3 N-Channel 30V 3.9A (Tc) 2.8W (Tc) Surface Mount SOT-363
Price & Procurement
45.966 In Stock
Can ship immediately
 

Quantity
All prices are in EUR.
Price Break Unit Price Extended Price
1 0,38000 0,38 €
10 0,30800 3,08 €
25 0,28240 7,06 €
100 0,17720 17,72 €
500 0,16404 82,02 €
1.000 0,11155 111,55 €

Submit a request for quotation on quantities greater than those displayed.

Unit Price
0,38000 €

Excludes VAT

0,44080 €

Includes VAT

Alternate Package
  • Tape & Reel (TR)  : SI1416EDH-T1-GE3TR-ND
  • Minimum Quantity: 3.000
  • Quantity Available: 45.000 - Immediate
  • Unit Price: 0,10696 €
  • Digi-Reel®  : SI1416EDH-T1-GE3DKR-ND
  • Minimum Quantity: 1
  • Quantity Available: 45.966 - Immediate
  • Unit Price: Digi-Reel®

SI1416EDH-T1-GE3

Datasheet
Digi-Key Part Number SI1416EDH-T1-GE3CT-ND
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Manufacturer

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Manufacturer Part Number SI1416EDH-T1-GE3
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Description MOSFET N-CH 30V 3.9A SOT-363
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Manufacturer Standard Lead Time 14 Weeks
Detailed Description

N-Channel 30V 3.9A (Tc) 2.8W (Tc) Surface Mount SOT-363

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Customer Reference
Documents & Media
Datasheets SI1416EDH
Video File MOSFET Technologies for Power Conversion
HTML Datasheet SI1416EDH
Product Attributes
Type Description Select All
Categories
Manufacturer Vishay Siliconix
Series TrenchFET®
Packaging Cut Tape (CT) 
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 30V
Current - Continuous Drain (Id) @ 25°C 3.9A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 2.5V, 10V
Rds On (Max) @ Id, Vgs 58mOhm @ 3.1A, 10V
Vgs(th) (Max) @ Id 1.4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 12nC @ 10V
Vgs (Max) ±12V
FET Feature -
Power Dissipation (Max) 2.8W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package SOT-363
Package / Case 6-TSSOP, SC-88, SOT-363
Base Part Number SI1416
 
Environmental & Export Classifications
RoHS Status ROHS3 Compliant
Moisture Sensitivity Level (MSL) 1 (Unlimited)
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Additional Resources
Standard Package 1
Other Names SI1416EDH-T1-GE3CT