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SI1029X-T1-GE3 Mosfet Array N and P-Channel 60V 305mA, 190mA 250mW Surface Mount SC-89-6
Price & Procurement
106.189 In Stock
Can ship immediately
 

Quantity
All prices are in EUR.
Price Break Unit Price Extended Price
1 0,41000 0,41 €
10 0,35200 3,52 €
25 0,32840 8,21 €
100 0,24370 24,37 €
500 0,19030 95,15 €
1.000 0,15467 154,67 €

Submit a request for quotation on quantities greater than those displayed.

Unit Price
0,41000 €

Excludes VAT

0,47560 €

Includes VAT

Alternate Package
  • Tape & Reel (TR)  : SI1029X-T1-GE3TR-ND
  • Minimum Quantity: 3.000
  • Quantity Available: 105.000 - Immediate
  • Unit Price: 0,14530 €
  • Digi-Reel®  : SI1029X-T1-GE3DKR-ND
  • Minimum Quantity: 1
  • Quantity Available: 106.189 - Immediate
  • Unit Price: Digi-Reel®

SI1029X-T1-GE3

Datasheet
Digi-Key Part Number SI1029X-T1-GE3CT-ND
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Manufacturer

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Manufacturer Part Number SI1029X-T1-GE3
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Description MOSFET N/P-CH 60V SC89-6
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Manufacturer Standard Lead Time 14 Weeks
Detailed Description

Mosfet Array N and P-Channel 60V 305mA, 190mA 250mW Surface Mount SC-89-6

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Customer Reference
Documents & Media
Datasheets Si1029X
HTML Datasheet Si1029X
EDA / CAD Models SI1029X-T1-GE3 by Ultra Librarian
Product Attributes
Type Description Select All
Categories
Manufacturer Vishay Siliconix
Series TrenchFET®
Packaging Cut Tape (CT) 
Part Status Active
FET Type N and P-Channel
FET Feature Logic Level Gate
Drain to Source Voltage (Vdss) 60V
Current - Continuous Drain (Id) @ 25°C 305mA, 190mA
Rds On (Max) @ Id, Vgs 1.4Ohm @ 500mA, 10V
Vgs(th) (Max) @ Id 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 0.75nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds 30pF @ 25V
Power - Max 250mW
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Package / Case SOT-563, SOT-666
Supplier Device Package SC-89-6
Base Part Number SI1029
 
Environmental & Export Classifications
RoHS Status ROHS3 Compliant
Moisture Sensitivity Level (MSL) 1 (Unlimited)
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Additional Resources
Standard Package 1
Other Names SI1029X-T1-GE3CT