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2N7002E-T1-GE3 N-Channel 60V 240mA (Ta) 350mW (Ta) Surface Mount TO-236
Price & Procurement
17.152 In Stock
Can ship immediately
 

Quantity
All prices are in EUR.
Price Break Unit Price Extended Price
1 0,37000 0,37 €
10 0,31100 3,11 €
100 0,23180 23,18 €
500 0,18210 91,05 €
1.000 0,14071 140,71 €

Submit a request for quotation on quantities greater than those displayed.

Alternate Package
  • Tape & Reel (TR)  : 2N7002E-T1-GE3TR-ND
  • Minimum Quantity: 3.000
  • Quantity Available: 15.000 - Immediate
  • Unit Price: 0,12456 €
  • Digi-Reel®  : 2N7002E-T1-GE3DKR-ND
  • Minimum Quantity: 1
  • Quantity Available: 17.152 - Immediate
  • Unit Price: Digi-Reel®

2N7002E-T1-GE3

Datasheet
Digi-Key Part Number 2N7002E-T1-GE3CT-ND
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Manufacturer

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Manufacturer Part Number 2N7002E-T1-GE3
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Description MOSFET N-CH 60V 240MA SOT23
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Detailed Description

N-Channel 60V 240mA (Ta) 350mW (Ta) Surface Mount TO-236

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Documents & Media
Datasheets 2N7002E Datasheet
Video File MOSFET Technologies for Power Conversion
HTML Datasheet 2N7002E Datasheet
Product Attributes
Type Description Select All
Categories
Manufacturer Vishay Siliconix
Series -
Packaging Cut Tape (CT) 
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 60V
Current - Continuous Drain (Id) @ 25°C 240mA (Ta)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 3Ohm @ 250mA, 10V
Vgs(th) (Max) @ Id 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 0,6nC @ 4,5V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 21pF @ 5V
FET Feature -
Power Dissipation (Max) 350mW (Ta)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package TO-236
Package / Case TO-236-3, SC-59, SOT-23-3
 
Environmental & Export Classifications
Lead Free Status / RoHS Status Lead free / ROHS3 Compliant
Moisture Sensitivity Level (MSL) 1 (Unlimited)
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Additional Resources
Standard Package 1
Other Names 2N7002E-T1-GE3CT