2N6660-E3 N-Channel 60V 990mA (Tc) 725mW (Ta), 6.25W (Tc) Through Hole TO-205AD (TO-39)
Product Overview
Digi-Key Part Number 2N6660-E3-ND
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Quantity Available 0
Manufacturer

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Manufacturer Part Number

2N6660-E3

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Description MOSFET N-CH 60V 990MA TO-205
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Detailed Description

N-Channel 60V 990mA (Tc) 725mW (Ta), 6.25W (Tc) Through Hole TO-205AD (TO-39)

Copy   N-Channel 60V 990mA (Tc) 725mW (Ta), 6.25W (Tc) Through Hole TO-205AD (TO-39)
Documents & Media
Datasheets 2N6660(2)/2N6660JANTX(V)
Video File MOSFET Technologies for Power Conversion
PCN Obsolescence/ EOL Mult Device OBS Update 15/May/2017
PCN Assembly/Origin SIL-062-2014-Rev-0 30/May/2014
Product Attributes Select All
Categories
Manufacturer Vishay Siliconix
Series -
Packaging ? Bulk ?
Part Status Obsolete
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 60V
Current - Continuous Drain (Id) @ 25°C 990mA (Tc)
Drive Voltage (Max Rds On, Min Rds On) 5V, 10V
Rds On (Max) @ Id, Vgs 3Ohm @ 1A, 10V
Vgs(th) (Max) @ Id 2V @ 1mA
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 50pF @ 25V
FET Feature -
Power Dissipation (Max) 725mW (Ta), 6.25W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Through Hole
Supplier Device Package TO-205AD (TO-39)
Package / Case TO-205AD, TO-39-3 Metal Can
 
Environmental & Export Classifications
Lead Free Status / RoHS Status Lead free / RoHS Compliant
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Additional Resources
Standard Package ? 100

02:56:06 7.22.2019