Price & Procurement
160 In Stock
Can ship immediately
 

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All prices are in EUR.
Price Break Unit Price Extended Price
1 28,80000 €28,80
10 26,56300 €265,63
100 22,68300 €2.268,30

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Unit Price
€28,80000

Excludes VAT

€34,27200

Includes VAT

TW070J120B,S1Q

Digi-Key Part Number 264-TW070J120BS1Q-ND
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Manufacturer

Toshiba Semiconductor and Storage

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Manufacturer Part Number TW070J120B,S1Q
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Description SICFET N-CH 1200V 36A TO3P
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Manufacturer Standard Lead Time 16 Weeks
Detailed Description

N-Channel 1200V 36A (Tc) 272W (Tc) Through Hole TO-3P(N)

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Customer Reference
Documents & Media
Featured Product TW070J120B SiC MOSFET
EDA / CAD Models TW070J120B,S1Q by Ultra Librarian
Product Attributes
Type Description Select All
Categories
Manufacturer Toshiba Semiconductor and Storage
Series -
Packaging Tube 
Part Status Active
FET Type N-Channel
Technology SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss) 1200V
Current - Continuous Drain (Id) @ 25°C 36A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 20V
Rds On (Max) @ Id, Vgs 90mOhm @ 18A, 20V
Vgs(th) (Max) @ Id 5.8V @ 20mA
Gate Charge (Qg) (Max) @ Vgs 67nC @ 20V
Vgs (Max) ±25V, -10V
Input Capacitance (Ciss) (Max) @ Vds 1680pF @ 800V
FET Feature Standard
Power Dissipation (Max) 272W (Tc)
Operating Temperature -55°C ~ 175°C
Mounting Type Through Hole
Supplier Device Package TO-3P(N)
Package / Case TO-3P-3, SC-65-3
Base Part Number TW070J120
 
Environmental & Export Classifications
Moisture Sensitivity Level (MSL) 1 (Unlimited)
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Additional Resources
Standard Package 25
Other Names 264-TW070J120BS1Q