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RN1109ACT(TPL3) Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Biased 50V 80mA 100mW Surface Mount CST3
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RN1109ACT(TPL3)

Datasheet
Digi-Key Part Number RN1109ACT(TPL3)DKR-ND
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Manufacturer

Toshiba Semiconductor and Storage

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Manufacturer Part Number RN1109ACT(TPL3)
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Description TRANS PREBIAS NPN 50V 0.08A CST3
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Detailed Description

Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Biased 50V 80mA 100mW Surface Mount CST3

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Customer Reference
Documents & Media
Datasheets RN1107ACT-09ACT
Product Attributes
Type Description Select All
Categories
Manufacturer Toshiba Semiconductor and Storage
Series -
Packaging Digi-Reel® 
Part Status Obsolete
Transistor Type NPN - Pre-Biased
Current - Collector (Ic) (Max) 80mA
Voltage - Collector Emitter Breakdown (Max) 50V
Resistor - Base (R1) 47 kOhms
Resistor - Emitter Base (R2) 22 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce 70 @ 10mA, 5V
Vce Saturation (Max) @ Ib, Ic 150mV @ 250µA, 5mA
Current - Collector Cutoff (Max) 500nA
Power - Max 100mW
Mounting Type Surface Mount
Package / Case SC-101, SOT-883
Supplier Device Package CST3
Base Part Number 2SC3668
 
Environmental & Export Classifications
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Additional Resources
Standard Package 1
Other Names RN1109ACT(TPL3)DKR