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IRF9Z34NPBF P-Channel 55V 19A (Tc) 68W (Tc) Through Hole TO-220AB
Price & Procurement
5.907 In Stock
Can ship immediately
 

Quantity
All prices are in EUR.
Price Break Unit Price Extended Price
1 0,76000 0,76 €
10 0,68300 6,83 €
25 0,64840 16,21 €
100 0,48640 48,64 €
250 0,48176 120,44 €
500 0,41226 206,13 €
1.000 0,33584 335,84 €
2.500 0,33121 828,02 €
5.000 0,30109 1.505,47 €

Submit a request for quotation on quantities greater than those displayed.

Unit Price
0,76000 €

Excludes VAT

0,88160 €

Includes VAT

IRF9Z34NPBF

Datasheet
Digi-Key Part Number IRF9Z34NPBF-ND
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Manufacturer

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Manufacturer Part Number IRF9Z34NPBF
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Description MOSFET P-CH 55V 19A TO-220AB
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Manufacturer Standard Lead Time 15 Weeks
Detailed Description

P-Channel 55V 19A (Tc) 68W (Tc) Through Hole TO-220AB

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Documents & Media
Datasheets IRF9Z34NPbF
Product Training Modules High Voltage Integrated Circuits (HVIC Gate Drivers)
Featured Product Data Processing Systems
Other Related Documents IR Part Numbering System
PCN Design/Specification Mult Dev No Format/Barcode Label 15/Jan/2019
HTML Datasheet IRF9Z34NPbF
Product Attributes
Type Description Select All
Categories
Manufacturer Infineon Technologies
Series HEXFET®
Packaging Tube 
Part Status Active
FET Type P-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 55V
Current - Continuous Drain (Id) @ 25°C 19A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 100mOhm @ 10A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 35nC @ 10V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 620pF @ 25V
FET Feature -
Power Dissipation (Max) 68W (Tc)
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Through Hole
Supplier Device Package TO-220AB
Package / Case TO-220-3
 
Environmental & Export Classifications
RoHS Status ROHS3 Compliant
Moisture Sensitivity Level (MSL) 1 (Unlimited)
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Additional Resources
Standard Package 50
Other Names *IRF9Z34NPBF
SP001560182