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IRF530NPBF N-Channel 100V 17A (Tc) 70W (Tc) Through Hole TO-220AB
Price & Procurement
9.417 In Stock
Can ship immediately
 

Quantity
All prices are in EUR.
Price Break Unit Price Extended Price
1 0,73000 0,73 €
10 0,65000 6,50 €
25 0,61000 15,25 €
100 0,44270 44,27 €
500 0,36988 184,94 €
1.000 0,31479 314,79 €
2.500 0,29511 737,78 €
5.000 0,26560 1.328,00 €
9.000 0,24593 2.213,34 €

Submit a request for quotation on quantities greater than those displayed.

Unit Price
0,73000 €

Excludes VAT

0,84680 €

Includes VAT

IRF530NPBF

Datasheet
Digi-Key Part Number IRF530NPBF-ND
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Manufacturer

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Manufacturer Part Number IRF530NPBF
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Description MOSFET N-CH 100V 17A TO-220AB
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Detailed Description

N-Channel 100V 17A (Tc) 70W (Tc) Through Hole TO-220AB

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Documents & Media
Datasheets IRF530NPbF
Product Training Modules High Voltage Integrated Circuits (HVIC Gate Drivers)
Simulation Models IRF530NPBF Saber Model
Featured Product Data Processing Systems
Other Related Documents IR Part Numbering System
PCN Design/Specification Mult Dev No Format/Barcode Label 15/Jan/2019
HTML Datasheet IRF530NPbF
Product Attributes
Type Description Select All
Categories
Manufacturer Infineon Technologies
Series HEXFET®
Packaging Tube 
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 100V
Current - Continuous Drain (Id) @ 25°C 17A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 90mOhm @ 9A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 37nC @ 10V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 920pF @ 25V
FET Feature -
Power Dissipation (Max) 70W (Tc)
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Through Hole
Supplier Device Package TO-220AB
Package / Case TO-220-3
 
Environmental & Export Classifications
RoHS Status ROHS3 Compliant
Moisture Sensitivity Level (MSL) 1 (Unlimited)
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Additional Resources
Standard Package 50
Other Names *IRF530NPBF
SP001570120