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IPD110N12N3GATMA1 N-Channel 120V 75A (Tc) 136W (Tc) Surface Mount PG-TO252-3
Price & Procurement
9.714 In Stock
Can ship immediately
 

Quantity
All prices are in EUR.
Price Break Unit Price Extended Price
1 1,71000 1,71 €
10 1,53600 15,36 €
100 1,13000 113,00 €
500 0,95616 478,08 €
1.000 0,81128 811,28 €

Submit a request for quotation on quantities greater than those displayed.

Alternate Package
  • Tape & Reel (TR)  : IPD110N12N3GATMA1TR-ND
  • Minimum Quantity: 2.500
  • Quantity Available: 5.000 - Immediate
  • Unit Price: 0,76800 €

IPD110N12N3GATMA1

Datasheet
Digi-Key Part Number IPD110N12N3GATMA1CT-ND
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Manufacturer

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Manufacturer Part Number IPD110N12N3GATMA1
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Description MOSFET N-CH 120V 75A TO252-3
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Manufacturer Standard Lead Time 13 Weeks
Detailed Description

N-Channel 120V 75A (Tc) 136W (Tc) Surface Mount PG-TO252-3

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Product Attributes
Type Description Select All
Categories
Manufacturer Infineon Technologies
Series OptiMOS™
Packaging Cut Tape (CT) 
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 120V
Current - Continuous Drain (Id) @ 25°C 75A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 11mOhm @ 75A, 10V
Vgs(th) (Max) @ Id 3V @ 83µA (Typ)
Gate Charge (Qg) (Max) @ Vgs 65nC @ 10V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 4310pF @ 60V
FET Feature -
Power Dissipation (Max) 136W (Tc)
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Surface Mount
Supplier Device Package PG-TO252-3
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
 
Environmental & Export Classifications
Lead Free Status / RoHS Status Lead free / ROHS3 Compliant
Moisture Sensitivity Level (MSL) 1 (Unlimited)
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Additional Resources
Standard Package 1
Other Names IPD110N12N3GATMA1CT