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IGT60R190D1SATMA1 N-Channel 600V 12.5A (Tc) 55.5W (Tc) Surface Mount PG-HSOF-8-3
Price & Procurement
276 In Stock
Can ship immediately
 

Quantity
All prices are in EUR.
Price Break Unit Price Extended Price
1 9,52000 9,52 €
10 8,76000 87,60 €
25 8,39680 209,92 €
100 7,26190 726,19 €
250 7,03500 1.758,75 €
500 6,58114 3.290,57 €
1.000 6,03649 6.036,49 €

Submit a request for quotation on quantities greater than those displayed.

Alternate Package

IGT60R190D1SATMA1

Datasheet
Digi-Key Part Number IGT60R190D1SATMA1CT-ND
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Manufacturer

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Manufacturer Part Number IGT60R190D1SATMA1
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Description IC GAN FET 600V 23A 8HSOF
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Manufacturer Standard Lead Time 12 Weeks
Detailed Description

N-Channel 600V 12.5A (Tc) 55.5W (Tc) Surface Mount PG-HSOF-8-3

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Product Attributes
Type Description Select All
Categories
Manufacturer Infineon Technologies
Series CoolGaN™
Packaging Cut Tape (CT) 
Part Status Active
FET Type N-Channel
Technology GaNFET (Gallium Nitride)
Drain to Source Voltage (Vdss) 600V
Current - Continuous Drain (Id) @ 25°C 12.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On) -
Rds On (Max) @ Id, Vgs -
Vgs(th) (Max) @ Id 1.6V @ 960µA
Vgs (Max) -10V
Input Capacitance (Ciss) (Max) @ Vds 157pF @ 400V
FET Feature -
Power Dissipation (Max) 55.5W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package PG-HSOF-8-3
Package / Case 8-PowerSFN
 
Environmental & Export Classifications
RoHS Status ROHS3 Compliant
Moisture Sensitivity Level (MSL) 1 (Unlimited)
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Additional Resources
Standard Package 1
Other Names IGT60R190D1SATMA1CT